| PART |
Description |
Maker |
| MT4953 |
Dual P-Channel High Density Trench MOSFET
|
matrix microtech
|
| KI8205T |
Dual N-Channel High Density Trench MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| ST3406SRG |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| V15P45 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| V8P10-15 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10PN50-M3-15 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10P45-M386A V10P45-87A V10P45-86A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10P12HM3-86A V10P12-M3-86A V10P12-M3-87A V10P12HM |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
